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BUK9506-55B
N-channel TrenchMOS FET
Rev. 04 -- 23 July 2009 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating
1.3 Applications
12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions VGS = 5 V; Tmb = 25 C; see Figure 1 and 3 Tmb = 25 C; see Figure 2
[1]
Symbol Parameter drain current total power dissipation
Min -
Typ -
Max 55 75 258
Unit V A W
drain-source voltage Tj 25 C; Tj 175 C
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 44 V; Tj = 25 C; see Figure 14 and 15 22 nC ID = 75 A; Vsup 55 V; RGS = 50 ; VGS = 5 V; Tj(init) = 25 C; unclamped 679 mJ
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
Quick reference ...continued Conditions VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 VGS = 5 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 Min Typ 4.8 Max 5.4 Unit m
Table 1.
Symbol Parameter Static characteristics RDSon drain-source on-state resistance
-
5.1
6
m
[1]
Continuous current is limited by package.
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name BUK9506-55B TO-220AB Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB Type number
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
2 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 5 V; see Figure 1 and 3 Tmb = 100 C; VGS = 5 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C; tp 10 s; pulsed; Tmb = 25 C
[1] [2] [1] [2] [2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj 25 C; Tj 175 C RGS = 20 k Min -15 -55 -55 Max 55 55 15 146 75 75 587 258 175 175 146 75 587 679 Unit V V V A A A A W C C A A A mJ
Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C; see Figure 2
Source-drain diode
Avalanche ruggedness non-repetitive ID = 75 A; Vsup 55 V; RGS = 50 ; VGS = 5 V; drain-source avalanche Tj(init) = 25 C; unclamped energy
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
150 ID (A) 100
03nh85
120 Pder (%) 80
03aa16
Capped at 75 A due to package 50
40
0 0 50 100 150 Tmb ( C) 200
0 0 50 100 150 Tmb (C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
(c) NXP B.V. 2009. All rights reserved.
BUK9506-55B_4
Product data sheet
Rev. 04 -- 23 July 2009
3 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
103 ID (A) 102 Limit RDSon = VDS / ID
03nh83
tp = 10 s
100 s Capped at 75 A due to package DC 1 ms 10 ms 100 ms
10
1 10-1
1
10
VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
4 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 Min Typ 60 Max 0.58 Unit K/W K/W
1 Zth(j-mb) (K/W) 10-1 = 0.5
03nh84
0.2 0.1 0.05 0.02
10-2
P = tp T
single shot
10-3 10-6 10-5 10-4 10-3 10-2 10-1
tp T
t
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
5 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 A; VGS = 0 V; Tj = -55 C ID = 250 A; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 9 and 10 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 9 and 10 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 9 and 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 55 V; VGS = 0 V; Tj = 25 C VDS = 55 V; VGS = 0 V; Tj = 175 C VDS = 0 V; VGS = 15 V; Tj = 25 C VDS = 0 V; VGS = -15 V; Tj = 25 C VGS = 4.5 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 VGS = 5 V; ID = 25 A; Tj = 175 C; see Figure 11 and 12 VGS = 5 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 Dynamic characteristics QG(tot) QGS QGD VGS(pl) Ciss Coss Crss td(on) tr td(off) tf LD total gate charge gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to center of die; Tj = 25 C from contact screw on mounting base to center of die; Tj = 25 C LS internal source inductance from source lead to source bonding pad; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 5 V; RG(ext) = 10 ; Tj = 25 C ID = 25 A; VDS = 44 V; Tj = 25 C; see Figure 14 and 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 16 ID = 25 A; VDS = 44 V; VGS = 5 V; Tj = 25 C; see Figure 14 and 15 60 11 22 2.4 5674 755 255 37 95 117 106 4.5 3.5 7.5 7565 906 350 nC nC nC V pF pF pF ns ns ns ns nH nH nH Min 50 55 1.1 0.5 Typ 1.5 0.02 2 2 4.8 5.1 Max 2.3 2 1 500 100 100 6.4 5.4 12 6 Unit V V V V V A A nA nA m m m m
Static characteristics
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
6 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
Table 6. Symbol VSD trr Qr
Characteristics ...continued Parameter source-drain voltage reverse recovery time recovered charge Conditions IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 13 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V; Tj = 25 C Min Typ 0.85 64 79 Max 1.2 Unit V ns nC
Source-drain diode
350 ID 10 (A) 300 6 5 250 200 150 100 50
03nj65
4.2 4 3.8 3.6 3.4
VGS (V) is
14 RDSon (m) 12
03nj66
3
3.2 3.4
VGS (V) is
4 10
8 3.2 3 2.8 2.6 2.4 0 0 2 4 6 8 VDS (V) 10 6
5 10
4
2 0 100 200 300 I (A) 400 D
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
03nj62
Fig 6.
Drain-source on-state resistance as a function of drain current; typical values
03nj63
200 gfs (S) 150
100 ID (A) 75
100
50
50
25 Tj = 175 C Tj = 25 C
0 0 20 40 60 I D (A) 80
0 0 1 2 VGS (V) 3
Fig 7.
Forward transconductance as a function of drain current; typical values
Fig 8.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
7 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
2.5 VGS(th) (V) 2.0 max
03ng52
10-1 ID (A) 10-2 min typ max
03ng53
1.5
typ
10-3
1.0
min
10-4
0.5
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 1 2 VGS (V) 3
Fig 9.
Gate-source threshold voltage as a function of junction temperature
7
03nj64
Fig 10. Sub-threshold drain current as a function of gate-source voltage
2 a 1.5
03ne89
RDSon (m) 6
1
5 0.5
4 3 7 11 VGS (V) 15
0 -60
0
60
120
Tj (C)
180
Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values
Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
8 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
100 IS (A) 75
03nj60
5 VGS (V) 4 VDD = 14 V 3
03nj61
VDD = 44 V 50 2 Tj = 175 C 25 1 Tj = 25 C 0 0.0 0 0.2 0.4 0.6 0.8 1.0 VSD (V) 0 20 40 QG (nC) 60
Fig 13. Source current as a function of source-drain voltage; typical values
Fig 14. Gate-source voltage as a function of gate charge; typical values
8000
03nj67
VDS ID VGS(pl) VGS(th) VGS QGS1 QGS2 QGD QG(tot)
003aaa508
C (pF) 6000
Ciss
4000 Coss
QGS
2000 Crss
Fig 15. Gate charge waveform definitions
0 10-1
1
10
VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
9 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2(1) Q
L
b1(2) (3x) b2(2) (2x)
1 2 3
b(3x) e e
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
Fig 17. Package outline SOT78 (TO-220AB)
BUK9506-55B_4 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
10 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
8. Revision history
Table 7. Revision history Release date 20090723 Data sheet status Product data sheet Change notice Supersedes BUK95_96_9E06_55B_3 Document ID BUK9506-55B_4 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK9506-55B separated from data sheet BUK95_96_9E06_55B_3. Product data sheet Product data Product data BUK95_96_9E06_55B-02 BUK95_96_9E06_55B-01 -
BUK95_96_9E06_55B_3 (9397 750 13519)
20041130
BUK95_96_9E06_55B-02 20021010 (9397 750 10474) BUK95_96_9E06_55B-01 20020813 (9397 750 09946)
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
11 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK9506-55B_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 23 July 2009
12 of 13
NXP Semiconductors
BUK9506-55B
N-channel TrenchMOS FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 July 2009 Document identifier: BUK9506-55B_4

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